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ptfa181001e PTFA181001F data sheet 1 of 11 rev. 02.1, 2009-02-20 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! description the ptfa181001e and PTFA181001F are 100-watt ldmos fets designed for edge and wcdma power amplifier applications in the dcs band. features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptf a181001e package h- 36248-2 thermally-enhanced high power rf ldmos fets 100 w, 1805 ? 1880 mhz 2-carrier wcdma drive-up v dd = 28 v, i dq = 750 ma, ? = 1880 mhz, 3gpp wcdma signal, p/a r = 8 db, 10 mhz carrier spacing -53 -48 -43 -38 -33 -28 -23 34 36 38 40 42 44 46 average output power (dbm) im3 (dbc), acpr (dbc) 5 10 15 20 25 30 35 drain efficiency (%) acpr efficiency im3 rf characteristics edge measurements ( not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 750 ma, p out = 45 w, ? = 1879.8 mhz characteristic symbol min typ max unit error vector magnitude rms evm ? 1.8 ? % modulation spectrum @ 400 khz acpr ? ?61 ? dbc modulation spectrum @ 600 khz acpr ? ?73 ? dbc gain g ps ? 16.5 ? db drain efficiency h d ? 36 ? % ptf a181001f package h- 37248-2 features ? thermally-enhanced packages ? broadband internal matching ? typical edge performance at 1879.8 mhz, 28 v - average output power = 45 w - linear gain = 16.5 db - efficiency = 36% - evm rms = 1.8% ? typical cw performance, 1880 mhz, 28 v - output power at p?1db = 120 w - gain 15.5 db - efficiency = 52% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 100 w (cw) output power ? pb-free and rohs compliant *see infineon distributor for future availability. www..net
ptfa181001e PTFA181001F data sheet 2 of 11 rev. 02.1, 2009-02-20 rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 750 ma, p out = 100 w pep, ? = 1850 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 16 16.5 ? db drain efficiency h d 39 41 ? % intermodulation distortion imd ? ?30 ?28 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.85 ? w operating gate voltage v ds = 28 v, i d = 750 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 407 w above 25c derate by 2.33 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 100 w cw) r q jc 0.43 c/w ordering information type and version package type package description marking ptfa181001e v4 h-36248-2 thermally-enhanced slotted flange, single-ended ptfa181001e PTFA181001F v4 h-37248-2 thermally-enhanced earless flange, single-ended PTFA181001F *see infineon distributor for future availability.
ptfa181001e PTFA181001F data sheet 3 of 11 rev. 02.1, 2009-02-20 edge evm and modulation spectrum vs. quiescent current v dd = 28 v, ? = 1879.8 mhz, p out = 46.5 dbm 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.65 0.70 0.75 0.80 0.85 0.90 quiescent current (a) evm rms (avg. %) . -90 -80 -70 -60 -50 -40 -30 -20 -10 modulation spectrum (dbc) evm 400 khz 600 khz edge modulation spectrum performance v dd = 28 v, i dq = 750 ma, ? = 1879.8 mhz -100 -80 -60 -40 -20 37 39 41 43 45 47 49 output power (dbm) modulation spectrum (dbc) 5 15 25 35 45 drain efficiency (%) efficiency 400 khz 600 khz typical performance (data taken in a production test fixture) intermodulation distortion vs. output power (as measured in a broadband circuit) v dd = 28 v, i dq = 750 ma, ? 1 = 1879 mhz, ? 2 = 1880 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 37 39 41 43 45 47 49 output power, avg. (dbm) imd (dbc) 3rd order 7th 5th edge evm performance v dd = 28 v, i dq = 750 ma, ? = 1879.8 mhz 0 2 4 6 8 37 39 41 43 45 47 49 output power (dbm) evm rms (avg. %) . 5 15 25 35 45 drain efficiency (%) evm efficiency
ptfa181001e PTFA181001F data sheet 4 of 11 rev. 02.1, 2009-02-20 linear broadband performance v dd = 28 v, i dq = 750 ma, p out avg = 47 dbm 20 25 30 35 40 45 50 55 1805 1818 1831 1844 1857 1870 1883 frequency (mhz) efficiency (%) -30 -20 -10 0 10 20 30 40 gain, return loss (db) gain return loss efficiency power sweep v dd = 28 v, ? = 1880 mhz 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 36 38 40 42 44 46 48 50 52 output power (dbm) power gain (db) i dq = 1125 ma i dq = 375 ma i dq = 750 ma im3 vs. output power at selected biases v dd = 28 v, ? 1 = 1879, ? 2 = 1880 mhz -60 -55 -50 -45 -40 -35 -30 -25 -20 37 39 41 43 45 47 49 output power, avg. (dbm) imd (dbc) i dq = 1125 ma i dq = 375 ma i dq = 750 ma broadband cw performance (at p-1db) v dd = 28 v, i dq = 750 ma 14 15 16 17 18 19 1805 1818 1831 1844 1857 1870 1883 frequency (mhz) gain (db) 35 40 45 50 55 60 efficiency (%), output power (dbm) output power efficiency gain typical performance (cont.)
ptfa181001e PTFA181001F data sheet 5 of 11 rev. 02.1, 2009-02-20 is-95 cdma performance v dd = 28 v, i dq = 750 ma, ? = 1880 mhz 0 5 10 15 20 25 30 35 33 35 37 39 41 43 45 47 output power, avg. (dbm) drain efficiency (%) -80 -70 -60 -50 -40 -30 -20 -10 adj. ch. power ratio (dbc) efficiency t case = 25c t case = 90c acp f c ? 0.75 mhz acpr f c + 1.98 mhz bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.15 a 0.44 a 0.73 a 1.10 a 2.20 a 3.30 a 4.41 a 5.51 a output power (p?1db) vs. drain voltage i dq = 750 ma, ? = 1880 mhz 49 50 51 52 24 26 28 30 32 drain voltage (v) output power (dbm) gain & efficiency vs. output power v dd = 28 v, i dq = 750 ma, ? = 1880 mhz 12 13 14 15 16 17 18 36 38 40 42 44 46 48 50 52 output power (dbm) gain (db) 5 15 25 35 45 55 65 drain efficiency (%) efficiency gain typical performance (cont.)
ptfa181001e PTFA181001F data sheet 6 of 11 rev. 02.1, 2009-02-20 broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 1805 4.62 ?6.23 1.71 2.79 1830 4.18 ?6.10 1.41 2.92 1850 4.20 ?6.13 1.47 3.05 1860 4.58 ?6.20 1.99 3.13 1880 4.42 ?6.36 1.91 3.16 0 . 1 0 . 1 0 . 1 - w a v e l e n g t h s t o w a r d g e n e r < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 1880 mhz 1805 mhz 1805 mhz z source 1880 mhz z load z 0 = 50 w three-carrier cdma2000 performance v dd = 28 v, i dq = 750 ma, ? = 1880 mhz 0 5 10 15 20 25 30 35 40 33 35 37 39 41 43 45 47 output power, avg. (dbm) drain efficiency (%) -75 -70 -65 -60 -55 -50 -45 -40 -35 adj. ch. power ratio (dbc) acp low acp up alt up efficiency typical performance (cont.)
ptfa181001e PTFA181001F data sheet 7 of 11 rev. 02.1, 2009-02-20 reference circuit reference circuit schematic for ? = 1880 mhz circuit assembly information dut ptfa181001e or PTFA181001F ldmos transistor pcb 0.76 mm [.030"] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 1880 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.314 l , 50.0 w 27.43 x 1.37 1.080 x 0.054 l 2 0.172 l , 38.0 w 14.73 x 2.16 0.580 x 0.085 l 3 0.016 l , 11.4 w 1.27 x 10.16 0.050 x 0.400 l 4 0.024 l , 60.0 w 2.24 x 0.99 0.088 x 0.039 l 5 0.218 l , 60.0 w 19.33 x 0.99 0.761 x 0.039 l 6 0.019 l , 6.9 w 1.52 x 17.78 0.060 x 0.700 l 7 0.044 l , 6.9 w 3.43 x 17.78 0.135 x 0.700 l 8, l 9 0.233 l , 53.0 w 20.45 x 1.24 0.805 x 0.049 l 10 0.039 l , 4.9 w 3.10 x 25.65 0.122 x 1.010 l 11 (taper) 0.037 l , 4.9 w / 10.3 w 2.92 x 25.65 / 11.43 0.115 x 1.010 / 0.450 l 12 (taper) 0.033 l , 10.3 w / 41.0 w 2.79 x 11.43 / 1.91 0.110 x 0.450 / 0.075 l 13 0.069 l , 41.0 w 6.35 x 1.91 0.250 x 0.075 l 14 0.038 l , 41.0 w 3.25 x 1.91 0.128 x 0.075 l 15 0.331 l , 50.0 w 28.98 x 1.37 1.141 x 0.054 1 electrical characteristics are rounded. rf_in a181001ef_sch_06-04-18 rf_out r3 2k v c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v qq1 lm7805 c1 0.001f v dd r5 10 v r4 2k v r1 1.2k v c9 10pf l 1 r9 10 v dut l 5 c6 1f c5 0.1f c4 10f 35v c7 0.01f r8 2k v c8 10pf r7 5.1k v c10 0.6pf l 2 l 3 l 6 l 7 l 4 r6 5.1k v c22 1.5pf c21 1.5pf c24 10pf c23 0.6pf l 10 l 11 l 12 l 13 l 14 l 8 l 9 l 15 v dd l1 c11 1f c13 1f c12 10pf c14 10f 50v c15 10f 50v c16 1f c18 1f c17 10pf c19 10f 50v c20 10f 50v l2
ptfa181001e PTFA181001F data sheet 8 of 11 rev. 02.1, 2009-02-20 reference circuit assembly diagram (not to scale) reference circuit (cont.) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key 399-1655-2-nd c5 capacitor, 0.1 f digi-key pcc104bct-nd c6, c11, c13, c16, c18 capacitor, 1.0 f atc 920c105 c7 capacitor, 0.01 f atc 200b 103 c8, c9, c12, c17, c24 ceramic capacitor, 10 pf atc 100b 100 c10, c23 ceramic capacitor, 0.6 pf atc 100b 0r6 c14, c15, c19, c20 tantalum capacitor, 10 f, 50 v garrett electronics tpse106k050r0400 c21, c22 ceramic capacitor, 1.5 pf atc 100b 1r5 l1, l2 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor 1.3 k-ohms digi-key p1.3kgct-nd r3, r8 chip resistor 2 k-ohms digi-key p2kect-nd r4 potentiometer 2 k-ohms digi-key 3224w-202etr-nd r5, r9 chip resistor 10 ohms digi-key p10ect-nd r6, r7 chip resistor 5.1 k-ohms digi-key p5.1kect-nd gerber files for this circuit available on request r4 q1 qq1 c3 c1 r2 c2 r1 r5 r3 c5 r8 c9 c10 r6 r7 c6 c4 r9 c8 c7 c16 c17 c18 c19 c20 c13 c14 c15 c11 c12 c24 c23 c21 c22 l2 l1 a181001_01 v dd v dd v dd a181001ef_assy a181001ef_dtl r4 q1 qq1 c3 c1 r2 c2 r1 r5 r3 c5 r8 r6 r7 c6 c4 c8 c7 v dd
ptfa181001e PTFA181001F data sheet 9 of 11 rev. 02.1, 2009-02-20 package outline specifications package h-36248-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products c l 34.04 [1.340] 19.810.20 [.780.008] 1.02 [.040] 19.43 0.51 [.765.020] (45 x 2.72 [.107]) 2x 12.70 [.500] 4.830.51 [.190.020] 27.94 [1.100] 4x r1.52 [r.060] 2x r1.63 [r.064] d g s flange 9.78 [.385] 0.0381 [.0015] -a- 071117_h-36248-2_po c l c l 3.610.38 [.142.015] sph 1.57 [.062] [.370 ] +.004 ?.006 lid 9.40 +0.10 ?0.15
ptfa181001e PTFA181001F data sheet 10 of 11 rev. 02.1, 2009-02-20 package outline specifications (cont.) package h-37248-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products c l 0.0381 [.0015] 2x 12.70 [.500] 19.430.51 [.765.020] 19.810.20 [.780.008] sph 1.57 [.062] flange 9.78 [.385] s g d ( 45 x 2.72 [.107]) 20.57 [.810] -a- 3.610.38 [.142.015] 1.02 [.040] 4.830.51 [.190.020] c l c l [r.020 ] +.015 ?.005 4x r0.508 +0.381 ?0.127 lid 9.40 +0.10 ?0.15 [.370 ] +.004 ?.006 071117_h-37248-2_po
data sheet 11 of 11 rev. 02.1, 2009-02-20 ptfa181001e/f confidential, limited internal distribution revision history: 2009-02-20 data sheet previous version: 2006-04-14, data sheet page subjects (major changes since last revision) 1, 2, 9, 10 update to product v4, with new package technologies. update package outline diagrams. 8 fixed typing error we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international goldmos ? is a registered trademark of infineon technologies ag. edition 2009-02-20 published by infineon technologies ag 81726 munich , germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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